| abstract |
A semiconductor device structure comprising: a gate stack (109,123) over a semiconductor substrate (100), the gate stack (109,123) comprising a work function layer (120) and a gate electrode (106, 122 ') surrounded by the work function layer (120); a cover element (124) over the gate stack (109, 123), the cover element (124) having an upper section and a lower section and the upper section being wider than the lower section, and wherein the gate electrode (106, 122 ') in the cover element (124) penetrates; and a spacer element (108) over a side wall (125S) of the cover element (124) and a side wall (125V) of the gate stack (109, 123). |