| abstract |
A semiconductor device (1) comprising a transistor (10) in a semiconductor body (100) having a first major surface (110) and a second major surface (120), the first major surface (110) being opposite the second major surface (120), and the transistor (10) comprises: a source region (201) on the first major surface (110) and extending to the second major surface (120), a drain region (205), a body area (220), a drift zone (260), a gate electrode (210) on the body region (220), wherein the body region (200) and the drift region (260) are arranged along a first direction between the source region (201) and the drain region (205), the first direction parallel to the first one Main surface (110) and the gate electrode (210) is arranged in trenches extending in the first direction, and an insulating layer (280) adjacent the second main surface (120) of the semiconductor body (100). |