http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014226403-B3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2014-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_051c2c135c88d49ddec8ddce54734479 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_137fd92c2112a1e4de05a1a1154b198a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba2dcf5b79b6b6f529e512d63a5e955e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_426ce91622e616a0446c6b67d59658a1 |
| publicationDate | 2016-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102014226403-B3 |
| titleOfInvention | Method for determining the quality of electrically conductive connections between front-side contacts and the semiconductive layer of silicon wafers used in photovoltaics |
| abstract | A method for determining the quality of electrically conductive connections between front side contacts and a semiconducting layer of photovoltaic silicon wafers, wherein the electrical contact resistance R K during a thermal treatment in which an electrically conductive connection between the outer surface and the semiconductive layer of the silicon wafer is formed using a glass-enriched silver layer, time and / or temperature resolved is determined; and In this case, the reaction time t R , by the temperature interval in which a certain glass viscosity in the glass-containing silver layer is exceeded, within this temperature interval, the at least partially melted glass penetrates an anti-reflection layer (ACR) on the silicon wafer, thereby causing fluctuations of the electrical contact resistance R K be determined, and used for the determination of quality and or the reaction intensity R I defines as the amplitude of the electrical contact resistance R K in the region in which the at least partially melted glass penetrates the antireflection layer and or the average increase of the electrical contact resistance R K in a region (II), in which the glass, starting from the melt from the transformation temperature T G goes into the solid state, is or will be used for the evaluation. |
| priorityDate | 2014-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.