| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2014-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c922c8d4ff7d4bc659e4b0409e93d1e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d44ced147e45a65943a244230d411121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09d8902a049a7b663815553bff649aa5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5c6235d1de8ba84ff1efc51dda0307e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e84eaaaed8998f5ad1a2ccb42215bef9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc9a8674f9a1a59e2d2f3c24e811f61c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc1a118bbe60a518b0806dd2d0349885 |
| publicationDate |
2021-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102014118993-B4 |
| titleOfInvention |
Semiconductor device structure and method of manufacturing the same |
| abstract |
A semiconductor device structure (100) comprising: a substrate (102); a gate stack structure (110) formed on the substrate (102); Gate spacers (116) formed on sidewalls of the gate stack structure (110); an isolation structure (104) formed in the substrate (102); and a source / drain stress structure (140) formed adjacent to the isolation structure (104), the source / drain stress structure (140) comprising: a cover layer (144) formed along the (311) and (111) crystal orientations; and a stress layer (142) formed between the substrate (102) and the cover layer (144), portions of the stress layer (142) being grown along the (311) and (111) crystal orientations. |
| priorityDate |
2013-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |