| abstract |
A power semiconductor device (1) comprising: a first contact (4), a second contact (14), a semiconductor volume (100) arranged between the first contact and the second contact, which comprises: an n-doped field stop layer (30) in order to spatially limit an electric field which is formed in the semiconductor volume (100) during the operation of the power semiconductor device (1), - A heavily p-doped zone (40) and an adjacent, heavily n-doped zone (50), which together form a tunnel diode (45), the tunnel diode being arranged as follows: in the vicinity of, or adjacent to, or within the field stop layer (30), wherein the tunnel diode (45) is adapted to provide protection against damage to the device due to an increase in electron flow in an abnormal operating condition by the rapid provision of holes. |