| abstract |
A semiconductor device comprising a transistor (200) in a semiconductor substrate (100) comprising a main surface (110), said transistor (200) comprising: a source region (201) of a first conductivity type and adjacent to the main surface (110), a drain region (205) of the first conductivity type and adjacent to the main surface (110), a channel region (220) of a second conductivity type, and a gate electrode (210), wherein the source region (201) and the drain region (205) are arranged along a first direction that is parallel to the main surface (110), the channel region (220) between the source region (201) and the drain region ( 205), the channel region (220) has a shape of a comb extending along the first direction, the comb comprises a top (220c) and first and second sidewalls (220b, 220a), the gate electrode (210) at the first side wall (220b) of the channel region (220) is arranged and the gate electrode (210) on the second side wall (220a) of the channel region (220) is not present. |