http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014110681-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0761 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66333 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0727 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7393 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate | 2014-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8b931cdfea281f4d885d5949940be10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f397cbf6b738548bdb3e938c67941d00 |
| publicationDate | 2016-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102014110681-A1 |
| titleOfInvention | REVERSE LEADING IGBT |
| abstract | There is provided a reverse conducting IGBT and a manufacturing method therefor. The reverse conducting IGBT comprises a semiconductor body (40) having a first surface (15), a second surface (16) opposite the first surface (16), and a drift region (1) of a first conductivity type interposed between the first surface (15) and the second surface (16) is arranged. A first electrode (10) is disposed on the first surface (15). A second electrode (11) is disposed on the second surface (16). The semiconductor body (40) further includes first collector regions (6) of a second conductivity type disposed on the second surface (16) and in ohmic contact with the second electrode (11) and back emitter regions (5) of the first conductivity type the second surface (16) and in ohmic contact with the second electrode (11) are arranged. In a horizontal direction substantially parallel to the first surface (16), the first collector regions (5) and the backside emitter regions (6) define an RC-IGBT region (151). The semiconductor body (40) further includes a second collector region (9) of the second conductivity type disposed on the second surface (16) and in ohmic contact with the second electrode (11). The second collector region (9) defines a pilot IGBT region (152) in the horizontal direction. The RC-IGBT region (151) has first semiconductor regions (2, 2a, 2A, 4) of the second conductivity type in ohmic contact with the first electrode (10) and between the drift region (1) and the first electrode (FIG. 10) are arranged. The pilot IGBT region (152) has second semiconductor regions (2 ', 2b, 2B, 4') of the second conductivity type in ohmic contact with the first electrode (10) and between the drift region (1) and the first Electrode (10) are arranged. A number of dopants of the second conductivity type per horizontal area of the first semiconductor regions (2, 2a, 2A, 4) is larger than a number of dopants of the second conductivity type per horizontal area of the second semiconductor regions (2 ', 2b, 2B, 4'). |
| priorityDate | 2014-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.