| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80e388d07cba4b8311e783e720f2432a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7823
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate |
2014-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0904ae2b0e53e6779ac7f0aeef578fd5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4bda0aae848fe9e2d85cc9626e07523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b638e27bef5edce3ee4b976cb14096f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a294c8f336203945a32d9a18328a310
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a14a64be92aea61de4176c9e0c844a5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f906258acb66528715021df5c535e74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f8d6205a1cd51f0c44231054f969974 |
| publicationDate |
2015-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102014110006-A1 |
| titleOfInvention |
Charge compensation semiconductor devices |
| abstract |
A field-effect semiconductor device comprises a semiconductor body (40) having a first surface (101) and an edge (41), an active region (110) and a peripheral region (120) between the active region (110) and the edge (41) , a source metallization (10) on the first surface (101) and a drain metallization (11). In the active region (110), first drift type first drift portions (1) alternate with second conductivity type compensating regions (6). The drift sections (1) contact the drain metallization (11) and have a first maximum doping concentration. The compensation regions (6) are in ohmic contact with the source metallization (10). The peripheral region (120) includes a first edge (41) termination region and a second semiconductor region (2) in ohmic contact with the drift sections (1) having a second maximum doping concentration of the first conductivity type that is less than that by a factor of ten first maximum doping concentration. The first edge (41) termination region of the second conductivity type is adjacent to the second semiconductor region (2) and in ohmic contact with the source metallization (10). |
| priorityDate |
2013-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |