| abstract |
A method of manufacturing a semiconductor device, the method comprising: Forming, by thermal oxidation, a field dielectric layer (240) lining a first and second trench (191, 192) and covering a first major surface (101a), the first and second trench (191, 192) projecting from the major surface (101a ) extend into a semiconductor layer (100a), Filling the lined first trench (191) and the lined second trench (192) with a first fill material (165) and selectively re-forming the first fill material (165) in the first trench (191), Implanting an oxide damage material (412) into the field dielectric layer (240), wherein the oxide damage material does not or only to a very minor extent inhibit oxide growth on the first fill material (165), Forming a mask (430) that covers the second trench (192) and exposes the first trench (191), Implanting an oxidation rate delivery material (411) into an exposed first portion (166) of the reformed filler material (165) in the first trench (191), and thermally oxidizing the first fill material (165), wherein on the first portion (166) an oxidation rate is at least twice as high as on non-implanted portions of the first fill material (165). |