| abstract |
A trench gate MOS transistor is provided. This includes a semiconductor substrate having a trench including a gate electrode, a source region, a body contact region adjacent to a channel region, wherein the dopant concentration in the channel region varies in a lateral direction and at least a minimum value in a direction from the gate electrode (12) to the body contact region (2) spaced from the gate electrode (12). Furthermore, a method of manufacturing the transistor is provided. |