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filingDate 2013-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102013223263-A1
titleOfInvention Nanowire transistor component
abstract There is provided a semiconductor device comprising a semiconductor substrate and a nanowire formed over the semiconductor substrate, the nanowire comprising a first layer having a tensile stress and a second layer having a compressive stress.
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