http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102013208799-A1

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filingDate 2013-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa482195f157bbeb764da780b0430d00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55a6e7d01dd999b1ce10a3e75863cdbc
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publicationDate 2014-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102013208799-A1
titleOfInvention SiO2-based barrier layer for high-temperature diffusion and coating processes
abstract The invention relates to a device for modifying semiconductors with corrosive process gases or for coating articles of silicon, ceramic, glass or graphite or for the production of silicon, comprising components with quartz glass base bodies, which are coated with a silicon dioxide layer having a higher porosity than that of Has quartz glass. Furthermore, the invention relates to a method for doping and coating of semiconductors, for coating objects made of glass, silicon, ceramic or graphite and for the production of silicon, in which the device according to the invention is used. Moreover, the invention relates to the use of an amorphous silicon dioxide layer on a quartz glass base body for reducing the corrosion by process gases.
priorityDate 2013-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 45.