| abstract |
The invention relates to a process for the deposition of polycrystalline silicon, wherein a silicon-containing gas is introduced into a reactor and deposited by reduction of the silicon-containing gas polycrystalline silicon on a heated by direct current passage to a temperature of at least 550 ° C carrier body, characterized during the reduction of the silicon-containing gas, at least one first metal selected from the group consisting of titanium, chromium, manganese, iron, cobalt, nickel, copper and zinc is present, which acts as a first catalyst and also at least one different from the first metal second metal selected from the group consisting of copper, silver and gold, which acts as a second catalyst. |