| abstract |
A thin film transistor, in particular for active matrix displays, having a semiconductor oxide channel and metallic or oxide gate, drain and source contacts, wherein between the oxide semiconductor channel (3) and the drain and source contacts (6) at least one Barrier layer (4, 5) is arranged, which inhibits an exchange of oxygen between the oxide semiconductor channel (3) and other layers (1, 2, 6), in particular the drain and source contacts (6). |