| abstract |
According to an embodiment of a field effect semiconductor device, the field effect semiconductor device includes a semiconductor body and a source electrode. The semiconductor body includes a drift region, a gate region and a source region of a first semiconductor material having a first bandgap, and an anode region of a second semiconductor material having a second bandgap less than the first bandgap. The drift region is of a first conductivity type. The gate region forms a pn junction with the drift region. The source region is of the first conductivity type and is in resistive electrical connection with the drift region and has a higher maximum doping concentration than the drift region. The anode region is of the second conductivity type, forms a heterojunction with the drift region, and is spaced from the source region. The source metallization is in resistive electrical connection with the source region and the anode region. |