Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-543 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03923 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-073 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0749 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
filingDate |
2013-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cecab34a447cced77b9b92c20eb6dce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61bb6642a31aab5e95f0227fab9cc34f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4f92d88c1b74f7249789581583ec745 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dd481402baf515a5aa75bb5d78e7dc1 |
publicationDate |
2019-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
DE-102013104232-B4 |
titleOfInvention |
solar cell |
abstract |
A thin film solar cell (100, 200) comprising: a lower electrode layer (120) formed on a substrate (110); a semiconductor absorber layer (130) formed on the lower electrode layer (120); 120), a buffer layer (140) formed on the absorber layer, a TCO seed layer (160) formed on the buffer layer; anda TCO bulk layer of the upper electrode (150) formed on the TCO seed layer, wherein the TCO bulk layer of the upper electrode is electrically connected to the lower electrode layer through a P2 crack line defining a vertical channel. wherein the TCO seed layer has a different microstructure than the TCO bulk layer of the upper electrode, and wherein the TCO seed layer has a polycrystalline structure of crystals with a different orientation angle than crystals in the TCO bulk layer the upper electrode. |
priorityDate |
2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |