| abstract |
An optoelectronic semiconductor chip is specified, comprising - A variety of active elements, which are spaced from each other, and - A carrier which is arranged transversely to the active elements, wherein The active elements each have a main axis which is perpendicular to the carrier, - the main axes are aligned parallel to each other, At least one converter material surrounds the multiplicity of active elements on the lateral surfaces, - The converter material comprises a conversion substance or a conversion substance and a matrix material The active elements each have a central core region, which is sheathed at least in two layers, an active layer encasing the core region and a cover layer encasing the active layer, Wherein the core region is formed with a first semiconductor material, The active layer comprises a light-emitting material, - The cover layer is formed with a second semiconductor material, and - The cover layer has a layer thickness between 0.1 nm and 100 nm. |