http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102013019513-A1

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filingDate 2013-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ebedf5762a1df0f78e8e94383306085
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publicationDate 2014-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102013019513-A1
titleOfInvention THREE-DIMENSIONAL STRUCTURE OF SILICON IMPLEMENTS
abstract Embodiments of the present invention include multi-chip devices that are disposed together in the same package. The plurality of chips are arranged on an intermediate element, which is then arranged on a housing substrate. The intermediate element comprises a semiconductor substrate, such as silicon, with feedthroughs extending from a front surface of the intermediate element to a rear surface of the intermediate element. The intermediate element may be a passive intermediate element or an active intermediate element. An active intermediate element contains the function of one or more chips and thus reduces the number of chips arranged on the active intermediate element.
priorityDate 2012-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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