| abstract |
Power semiconductor device module with: a base plate (1F); an insulating substrate (2) mounted on the base plate, and a power semiconductor device (3, 4) mounted on the insulating substrate (2), wherein the device module was obtained by modularizing the base plate (1F), the insulating substrate (2) and the power semiconductor device (3, 4), wherein the insulating substrate (2) has a first electrode layer (11, 11A) disposed on a first main surface and a second electrode layer (12D) disposed on a second main surface; the power semiconductor device (3, 4) is joined to the first electrode layer (11, 11A), the second electrode layer (12D) is joined to a first main surface of the base plate (1F), a thermal resistance reducing portion that reduces the thermal resistance is provided in the second electrode layer (12D) of a portion corresponding to a position immediately below the power semiconductor device (3, 4), the heat resistance reducing portion is formed of a metallic thermal conductive block (7A) embedded in a portion of the base plate (1F) corresponding to a location immediately below the power semiconductor device (3, 4) such that a portion thereof is vertically spaced from the first main surface of the base plate (1F) protrudes, the second electrode layer (12D) has a concave portion (CP3) provided in the portion corresponding to the position immediately below the power semiconductor device (3, 4), and the insulating substrate (2) is mounted on the base plate (1F) so that an excellent portion of the thermally conductive block (7A) is inserted into the concave portion (CP3). |