| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ac179bcbad17b8ea0260c65f201da92 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-9501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-28 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-02 |
| filingDate |
2012-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_175fbe2472140423b4640fcfc3d504c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7735888ecb486cb1882e2b235ecd309f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4195d28b8128ff519f59ce194632b5fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e62563c71bf438266ef7cd3f6a4ef8a7 |
| publicationDate |
2014-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102012217727-A1 |
| titleOfInvention |
Method for detecting defects in monocrystalline silicon |
| abstract |
The invention relates to a method for detecting defects in monocrystalline silicon, comprising the following steps: a) providing a sample of monocrystalline silicon; b) contamination of the sample with one of the metals nickel, palladium or platinum in a surface concentration of 1 × 10 11 to 1 × 10 14 / cm 2 ; c) Thermal treatment of the contaminated sample at a temperature (T) of 500 to 1000 ° C for a duration (d) chosen as a function of the temperature (T) to give the inequality d / h ≦ exp (18.4-0.0206 × T / ° C) and the sample is cooled to a temperature of 400 ° C or less at the end of the period (d) at a cooling rate of 0.5 to 150 K / sec; and d) Detection of the defects present in the thermally treated sample. |
| priorityDate |
2012-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |