| abstract |
A method of replacing metal with semiconductor material, replacement metal gate field effect transistors (RMGFETs) and spare metal contacts (RMCs) and integrated circuit chips (ICs) comprising the FETs and / or RMCs. A patterned semiconductor layer, e.g. Silicon, is deposited on a dielectric layer, e.g. a layered gate dielectric. A field dielectric layer fills the space between shapes in the patterned semiconductor layer. Metal is applied to the molds. The wafer is annealed to replace semiconductors in any shape with metal to form metal FET gate regions or metal contacts. |