| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd446fb0d73aa96d044fea2eaa3c8ebc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-025 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0018
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01P15-0802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00682 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01P15-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00 |
| filingDate |
2012-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beee9a318f6e6cade6c14148d2f10189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b12a01c42defe67ae90beaad752e9523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_410afea8f9d81cd1ec4934bad9af1390 |
| publicationDate |
2013-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102012208030-A1 |
| titleOfInvention |
Micromechanical inertial sensor and method for its production |
| abstract |
Measures are proposed for increasing the measuring sensitivity of a micromechanical inertial sensor which comprises at least one ASIC component (10) with a processed front side, a MEMS component (20) with a micromechanical sensor structure and a cap wafer (31). The sensor structure of the MEMS device (20) comprises at least one seismic mass (25) and extends over the entire thickness of the MEMS substrate (20). The MEMS device (20) is mounted on the processed front side of the ASIC device (10) via a stand-off structure (15) and via contacts (22) in the MEMS substrate (20) and in adjoining supports (15) Structure electrically connected to the ASIC device (10). The cap wafer (31) is mounted over the micromechanical sensor structure of the MEMS device (20). According to the invention, at least one blind hole (23) is formed in the MEMS substrate (20) at least in the region of the seismic mass (25), which is filled with the same electrically conductive material as the vias (22). This electrically conductive material has a higher density than the MEMS substrate material (20). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11787686-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018054470-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102017207453-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102017120290-B3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102019210663-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102019210663-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10766766-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11180362-B2 |
| priorityDate |
2012-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |