| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80e388d07cba4b8311e783e720f2432a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-22 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7393
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66128
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-328 |
| filingDate |
2012-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15bd4ead9dd0265dcb002c4318b3e0b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a294c8f336203945a32d9a18328a310
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_052fccba61abb79b2771fdf647c20dae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3e9ec73500921fbff8c4f03953f48be |
| publicationDate |
2013-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102012109902-A1 |
| titleOfInvention |
Power semiconductor diode, IGBT, and process for their manufacture |
| abstract |
A power semiconductor diode is created. The power semiconductor diode comprises a semiconductor substrate (110) having a first emitter region (130) of a first conductivity type, a second emitter region (120) of a second conductivity type and a drift region (140) of the first conductivity type between the first emitter region (130) and the second emitter region (120) is arranged. The drift region (140) forms a pn junction with the second emitter region (120). A first emitter metallization (151) is in contact with the first emitter region (130). The first emitter region (130) comprises a first doping region (131) of the first conductivity type and a second doping region (132) of the first conductivity type. The first doping region (131) forms an ohmic contact with the first emitter metallization (151) while the second doping region (132) forms a non-ohmic contact with the first emitter metallization (151). A second emitter metallization (152) is in contact with the second emitter region (120). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014115303-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9647100-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014115303-B4 |
| priorityDate |
2011-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |