| abstract |
A method of chemical mechanical polishing of a substrate comprising a germanium antimony tellurium phase change alloy (GST) using a chemical mechanical polishing composition comprising as original components: water, an abrasive, at least one of a phthalic acid, a phthalic anhydride , a phthalate compound and a phthalic acid derivative, a chelating agent, a poly (acrylic acid-ca-maleic acid) and an oxidizing agent, the chemical mechanical polishing composition facilitates a high GST removal rate with a low defect number. |