http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102012005815-B4
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2603 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
filingDate | 2012-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2015-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2df29d1d4d3e53778b63235855a23131 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f54c0a81a91ebe299c3f96e078a8e27e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21745c30ac5de01d2d97be8e8dcc1e1d |
publicationDate | 2015-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DE-102012005815-B4 |
titleOfInvention | Method and device for determining the Temperaturkalibrierkennlinie a semiconductor device of the power electronics |
abstract | Method for determining the temperature calibration characteristic of a semiconductor component of power electronics, characterized in that the power connections of the semiconductor component (3) With a first current source (1) for a load current (I load ), With a second current source (2) for a measuring current (I measuring ), - be connected to a voltmeter (V) for measuring the voltage dropped across either the power terminals or the auxiliary terminals connected to the power terminals (U CE ), wherein the semiconductor device (3) connected to a data processing system - is heated at intervals when switched on the first power source (1) on the power loss, - the voltage (U CE ) dropping across the power or auxiliary terminals when the first power source (1) is turned off and the second power source (2) is turned on between the intervals after a period of time determined by the main thermal time constant of the semiconductor device (3) as the temperature representing values become, - At the same time the temperature is detected by means of at least one coupled to the semiconductor device (3) and interconnected with the data processing system temperature sensor and - The respective temperature is assigned to the voltage value, so that the voltage values and the temperatures form the calibration characteristic of the semiconductor device (3) after an approximation. |
priorityDate | 2012-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6547 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414859283 |
Total number of triples: 18.