http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102012005815-B4

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2603
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 2012-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2df29d1d4d3e53778b63235855a23131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f54c0a81a91ebe299c3f96e078a8e27e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21745c30ac5de01d2d97be8e8dcc1e1d
publicationDate 2015-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102012005815-B4
titleOfInvention Method and device for determining the Temperaturkalibrierkennlinie a semiconductor device of the power electronics
abstract Method for determining the temperature calibration characteristic of a semiconductor component of power electronics, characterized in that the power connections of the semiconductor component (3) With a first current source (1) for a load current (I load ), With a second current source (2) for a measuring current (I measuring ), - be connected to a voltmeter (V) for measuring the voltage dropped across either the power terminals or the auxiliary terminals connected to the power terminals (U CE ), wherein the semiconductor device (3) connected to a data processing system - is heated at intervals when switched on the first power source (1) on the power loss, - the voltage (U CE ) dropping across the power or auxiliary terminals when the first power source (1) is turned off and the second power source (2) is turned on between the intervals after a period of time determined by the main thermal time constant of the semiconductor device (3) as the temperature representing values become, - At the same time the temperature is detected by means of at least one coupled to the semiconductor device (3) and interconnected with the data processing system temperature sensor and - The respective temperature is assigned to the voltage value, so that the voltage values and the temperatures form the calibration characteristic of the semiconductor device (3) after an approximation.
priorityDate 2012-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6547
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414859283

Total number of triples: 18.