http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102011122982-B3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59c820ad08f8533c7440ae1d9235b168 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F2017-0066 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-046 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F17-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F27-00 |
| filingDate | 2011-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d0c1733545285f3e24658aca7c9bdfa |
| publicationDate | 2018-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102011122982-B3 |
| titleOfInvention | Method for producing an integrated induction coil |
| abstract | A method of integrating an induction coil into a semiconductor substrate, comprising: Providing a semiconductor substrate (10) having a first surface (11) and a second surface (12), the semiconductor substrate (10) having a first doping region (14, 15) of a first conductivity type and a second doping region (13) of a second conductivity type wherein the first and second doping regions (13) form a buried pn junction (16), the first doping region (14, 15) extending from the first surface (11) of the semiconductor substrate (10) to the pn junction (16 ), wherein the second doping region (13) extends from the second surface (12) of the semiconductor substrate (10) to the pn junction (16); Forming at least one first trench (21, 21a) and at least two openings (23) in the semiconductor substrate (10) by anisotropically etching the first trench (21, 21a) and the at least two openings (23) so as to pass through the first Doping region (14, 15) and partially extending into the second doping region (13), wherein the first trench (21, 21a) and the at least two openings (23) extend from the first surface (11) into the semiconductor substrate (10), wherein the first trench (21, 21a) has an annular shape, wherein a portion of the first trench (21, 21a) is disposed between the at least two openings (23); Doping at least bottom portions of the first trench (21, 21a) and the at least two openings (23) to form doping regions (17) of the first conductivity type, wherein the doping regions (17) have pn junctions (16) with the second doping region (13). form; Depositing a magnetically soft material into the first trench (21, 21a) to form an annular closed magnetizable core structure (41); Depositing a conductive material into the at least two openings (23) to form vias (43); selectively etching the second doping region (13) with respect to the doping regions (17) and first conductivity type doping regions (14, 15); and Forming an electrical connection (52) between the vias (43). |
| priorityDate | 2010-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.