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filingDate 2011-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d10c066f8f78607802c47b4467619242
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publicationDate 2012-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102011113804-A1
titleOfInvention An adjustable dielectric polishing selectivity slurry composition and method for polishing a substrate
abstract A chemical-mechanical polishing slurry composition containing as original components water, an abrasive, a halogenated quaternary ammonium compound of the formula (I) wherein R 8 is selected from a C 1-10 alkyl group and a C 1-10 hydroxyalkyl group, wherein X 1 is a halide selected from chloride, bromide, iodide and fluoride wherein R 9 , R 10 and R 11 are each independently selected from a saturated or unsaturated C 1-10 alkyl group, a C 1-10 haloalkyl group, a C 6-15 aryl group, a C 6-15 haloaryl group, a C 6-15 arylalkyl group and a C 6-15 haloarylalkyl, and wherein the anion in the formula (I) can be any anion which is the + - Charge on the cation in formula (I), and optionally comprising a diquaternary substance according to formula (II) wherein each A is independently selected from N and P, wherein R 1 is selected from a saturated or unsaturated C 1 -C 15 - Alkylgru ppe, a C 6 -C 15 aryl group and a C 6 -C 15 aralkyl group, wherein R 2 , R 3 , R 4 , R 5 , R 6 and R 7 are each independently selected from hydrogen, a saturated or unsaturated C C 1 -C 15 alkyl group, C 6 -C 15 aryl group, C 6 -C 15 aralkyl group and C 6 -C 15 alkaryl group, and wherein the anion in formula (II) is any anion or any of Combination of anions which (s) offsets or offsets the 2 + charge on the cation in formula (II). Also provided are methods of making the CMP slurry composition and using the CMP polishing composition to polish a substrate.
priorityDate 2010-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 56.