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publicationDate 2013-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102011089261-A1
titleOfInvention Transistor structure, method for producing a transistor structure, force measuring system
abstract A transistor structure comprises a first connection region, a second connection region and an intermediate channel region in a semiconductor substrate. Furthermore, the transistor structure comprises a control electrode assigned to the channel region, wherein the control electrode has a control electrode section that is elastically deflectable under a force effect and is spaced from the channel region. The distance between the control electrode portion and the channel region is changed based on the force.
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