| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_958f1b8f7a28405c03f1667c0ad4e692 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-424
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-668
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2111-00353 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-5001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-565 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F16C33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-565 |
| filingDate |
2011-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f514fa4cdaf70ae4ab70bd2dfc1037fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4b09512f57bd6a771e858a529142a0f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_418e40897b221e29871e5b46c4579d13 |
| publicationDate |
2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102011056896-A1 |
| titleOfInvention |
Method of making and using graphene on polycrystalline silicon carbide |
| abstract |
The invention relates to a method for producing as well as the use of graphene on polycrystalline silicon carbide. In order to provide a method for producing surfaces with very low friction, the following method steps are proposed in the context of the invention: Polishing the surfaces of silicon carbide bodies with a homogeneous distribution of carbon, • Clean the silicon carbide body and Graphene at least one of the polished surfaces by annealing at temperatures of 1500 to 1700 ° C for 10 to 20 minutes in flowing argon. It has surprisingly been found within the scope of the invention that on polished layers of solid-phase sintered silicon carbide surfaces can be realized, which are characterized by a very low friction, which is based on the presence of graphene layers on the surfaces of Siliziumcarbidkörnern different orientation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014205297-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102017211660-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102017211660-A1 |
| priorityDate |
2011-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |