http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102011055185-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate | 2011-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a39e8b1d70dea2ec3b6a25b3458bc38f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f88225fe8b415b968ee5599ce2df1528 |
| publicationDate | 2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102011055185-B4 |
| titleOfInvention | Integrated circuit with field effect transistor |
| abstract | Integrated circuit (100, 100 ', 100'') comprising: a semiconductor carrier (101) having a first side (102) and a second side (103) opposite the first side (102) and a first region (104) between the first side (102) and the second side (103), and a second region (106) adjacent to the first region (104) also between the first side (102) and the second side (103); a FET (105) in the first region (104) of the semiconductor carrier (101), wherein a drain of the FET is electrically coupled to a drain contact region on the first side (102) and a source of the FET having a source contact region (120) to the second Side (103) is electrically coupled; first circuit elements in the second region (106) of the semiconductor carrier, wherein the second region (106) of the semiconductor carrier (101) surrounding the second region (106) by a trench isolation (108) extending from the first side (102) to the second Side (103) extends, is electrically isolated; an interconnect layer (116) electrically interconnecting the first circuit elements at the second side (103), the interconnect layer (116) being electrically isolated from the source contact region (120) throughout the second region (106) via an isolation layer (119); and a conductive path (137) extending through the semiconductor carrier (101) from the first side (102) to the second side (103), the conductive path being electrically isolated from the semiconductor carrier (101) surrounding the conductive path (137) ; and wherein at least one of the first circuit elements is electrically coupled to a contact region (136) on the first side (102) via the conductive path (137). |
| priorityDate | 2010-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 19.