| abstract |
Method for producing a semiconductor component (10), in particular a diode or a solar cell, with the steps: (a) providing a substrate (1) on which a bonding layer (2, 2.4) is formed, which contains a metal and is fixedly connected to the substrate (1), (b) applying a semiconductor film (3) made of a semiconductor material to the bonding layer (2, 2.4), and (c) heating the semiconductor film (3) and the bonding layer (2, 2.4) to a temperature above the eutectic temperature of a composition of the metal and the semiconductor material, wherein a compound of the semiconductor film (3) with the bonding layer (2, 2.4) and is formed via the joining layer (2, 2.4) with the substrate (1), characterized in that - The heating takes place by means of locally acting laser irradiation. |