http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102011015263-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3f46bfa123b6528a8fcefddbe67bf16a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 2011-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba103d81e16453201bcd6dae2b75a143 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62c47b8c85262a836236ba716907f2f1 |
| publicationDate | 2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102011015263-A1 |
| titleOfInvention | Apparatus and method for treating substrates |
| abstract | There is described a device for treating substrates, which has a housing surrounding a process chamber, and at least one substrate receptacle in the housing Further, a tubular microwave electrode is provided for generating a plasma, wherein the tube axis is directed to the substrate receptacle, and a moving unit, which carries the microwave electrode or the substrate holder and is suitable for moving the microwave electrode or the substrate holder so that the tube axis sweeps over the substrate holder during a treatment. In addition, the apparatus includes a first gas guide having a first outlet opening into the tubular microwave electrode and facing the substrate receiver and a second gas guide at least partially surrounding the first gas guide and having a second outlet coaxial with the first Outlet is aligned, wherein the first and second gas guide are connected to the moving unit to be moved together with the microwave electrode, and wherein the first and second gas guide can be acted upon by different gas sources. There is also described a method of treating substrates, comprising the steps of directing a beam of hydrogen and / or deuterium-containing gas through a first microwave plasma spaced from the substrate to be treated to a beam of hydrogen and / or deuterium radicals with the beam of hydrogen and / or deuterium radicals directed to the substrate to be treated, directing a beam of precursor gases through the microwave plasma such that the beam of precursor gases is surrounded by the beam of hydrogen and / or deuterium radicals, and forming a common process beam directed at the substrate to be treated, and sweeping the process beam across the substrate to be treated to deposit an epitaxial layer on the substrate, wherein the sweeping is accomplished by a corresponding movement of a first microwave electrode and gas introduction nozzles for the hydrogen U.N d / or deuterium-containing gas and the Prekursorgase is effected |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102012002129-A1 |
| priorityDate | 2010-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.