http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102010063775-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36edd9295de11a5abafbc629cd9f2d57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 2010-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_293ab061f8748043c214ec7318845a86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_349586564a38af9b9ecc9860167a7868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_141ebb1a3132788c3e896564572e28a1 |
| publicationDate | 2019-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102010063775-B4 |
| titleOfInvention | Method for producing a semiconductor device with self-aligned contact bars and metal lines with enlarged receiving areas for contact bushings |
| abstract | A method of manufacturing a semiconductor device, the method comprising: Providing a contact bar (222a) in a first dielectric material (221) formed laterally between a first gate electrode structure (240) and a second gate electrode structure (240), the contact bar (222a) having a top width (122t) and a length; Forming a second dielectric material (230) over the first dielectric material (221) and the contact beam (222a); Performing a first etch process based on a first critical critical dimension of a trench (234a) in the second dielectric material (230), the first etch process forming the trench (234a) in the second dielectric material (230); the trench (234a) Connects to the contact beam (222a) and the first target dimension defines a bottom width of the trench (132b) and is smaller than the top width (122t) of the contact beam (222a); After the first etching process, performing at least one process to set a second critical critical dimension (132v), the second critical critical dimension (132v) defining a top width of an upper trench region (234v) in a localized region along the length of the trench (234a) and is greater than the first critical target dimension (132b); Performing a second etch process based on the second target critical dimension such that the top trench region (234v) is formed in the localized region along the length of the trench (234a) in the second dielectric material (230) based on the second target critical dimension; and Forming a metal material in the trench (234a). |
| priorityDate | 2010-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.