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filingDate 2010-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102010062386-A1
titleOfInvention Method for converting semiconductor layers
abstract The present invention relates to a method for converting semiconductor layers, in particular for converting amorphous into crystalline silicon layers, in which the conversion is carried out by treating the semiconductor layer with a plasma generated by a plasma source equipped with a plasma nozzle (1). In addition, the present invention relates to semiconductor layers produced by the process, to electronic and optoelectronic products comprising such semiconductor layers, and to a plasma source for carrying out the method according to the invention.
priorityDate 2010-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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