abstract |
The present invention relates to a method for converting semiconductor layers, in particular for converting amorphous into crystalline silicon layers, in which the conversion is carried out by treating the semiconductor layer with a plasma generated by a plasma source equipped with a plasma nozzle (1). In addition, the present invention relates to semiconductor layers produced by the process, to electronic and optoelectronic products comprising such semiconductor layers, and to a plasma source for carrying out the method according to the invention. |