http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102010040071-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36edd9295de11a5abafbc629cd9f2d57 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2010-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e85c74f495ce50e39fa5b5616ac898f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d574bc44869337651def11bfc03c1d77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27b8b124c8c56ae59333603b8bfb8cb9 |
| publicationDate | 2013-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102010040071-B4 |
| titleOfInvention | A method for restoring surface properties of sensitive low ε dielectrics in microstructure devices using in-situ surface modification |
| abstract | A method of making a metallization system of a semiconductor device, the method comprising: Forming an aperture in a low-k dielectric material extending to a metal region by acting on the low-k dielectric material by means of a reactive plasma-assisted etch atmosphere, wherein the low-k dielectric material comprises silicon, oxygen, carbon, and hydrogen; by the action of the reactive plasma assisted etching atmosphere, unsaturated silicon bonds are formed in an exposed interface layer of the low-k dielectric material; Performing a surface treatment on the low-k dielectric material containing the opening, supplying process gases containing a reactive species in the form of hydrogen, nitrogen, carbon, chlorine, bromine or iodine, such that the unsaturated silicon bonds through the reactive silicon Be saturated before the semiconductor device is exposed to a moisture-containing environment; and Replacement of a Substantial Part of the Reactive Variety by a Substitution Variety Containing a Methyl Group in the Interfacial Layer, so ... |
| priorityDate | 2010-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.