| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80e388d07cba4b8311e783e720f2432a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-901 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate |
2010-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1ea6c6ae89ca6d2044408f79e7bb87b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_052fccba61abb79b2771fdf647c20dae |
| publicationDate |
2011-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102010036818-A1 |
| titleOfInvention |
Bipolar semiconductor device and manufacturing method |
| abstract |
A bipolar semiconductor device (100) having a hole current redistribution structure (10) and an n-channel IGBT (100) is provided. The n-channel IGBT (100) has a p-doped body region (3) with a first hole mobility and a sub-region (10) that is completely embedded in the body region (3) and has a second hole mobility that is lower than the first hole mobility. Furthermore, a method of forming a bipolar semiconductor device (100) is provided. |
| priorityDate |
2009-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |