http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102010035602-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36 |
| filingDate | 2010-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_469e72eb54bd00fdf47e004dd0f47a33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bcfad30ce10f99bb57685a34929f846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52efa8c57c7613c9a8fb08549828428b |
| publicationDate | 2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102010035602-A1 |
| titleOfInvention | Method for structuring a layer using a hard mask |
| abstract | The present invention relates to a method for structuring a layer by means of a hard mask. In the method, a hard mask is applied over the layer to be patterned. With this hard mask as an etching mask, the layer to be structured is then subjected to a dry etching process. The method is characterized in that the hard mask is formed of a metal oxide, a metal nitride, a metal carbide, a metal silicate or a combination with a material of this group as the main component. By this choice of material very thin hard mask layers and thus very thin photoresist layers can be used. This allows the structuring of layers with feature sizes smaller than 50 nm. |
| priorityDate | 2010-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.