http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102009045216-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ede1922bbf806c9cb30abefec1d5e3f5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7428 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-332 |
| filingDate | 2009-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa208aec00118acbe2195263db479fb1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_503283dab978fed9a00bd4386daf3f7c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aab8aef6943fae78e342f82e54701db5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_287fd5f0828cf6e534cc2c70f966c65a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_187ab0127fcd1efb4c0a5f303c9f4627 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_842e7d5ebe3d4f6451a37b9ef6c9af05 |
| publicationDate | 2019-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102009045216-B4 |
| titleOfInvention | A thyristor with improved ruggedness against high current rate commutation shortly after a firing event and method of making such a thyristor |
| abstract | Thyristor with a semiconductor body (1); - A cathode region (3), in which in a vertical direction (v) starting from a rear side (12) of the semiconductor body (1) towards a front side (11) of the semiconductor body (1) successively a p-doped emitter (8) , an n-doped base (7), a p-doped base (6) and an n-doped emitter (5) are arranged, wherein the lateral boundary of the cathode region (3) through the lateral boundary of the n-doped emitter (5 ) given is; an ignition region (2) which comprises an ignition device (10, 92) for igniting the thyristor (100) and which adjoins the cathode region (3) perpendicular to the vertical direction (v) and has a common interface (23) therewith having; - A perpendicular to the vertical direction (v) along the interface (23) extending boundary portion (4) of the semiconductor body (1) comprising a first edge portion (21) of the ignition region (2), which on the cathode region (3) facing side of the ignition region (2) and bounded by the interface (23), and / or a second edge portion (31) of the cathode region (3), which on the ignition region (2) facing side of the cathode region (3) and arranged through the Interface (23) is limited; in which - The ignition region (2) has a main portion (22) which is formed by the outside of the first edge portion (21) arranged portion of the ignition region (2); - The cathode region (3) has a main portion (32) which is formed by the outside of the second edge portion (31) arranged portion of the cathode region (3); - The carrier lifetime (τ) in the semiconductor body (1) along a vertical direction (v) perpendicular first lateral axis (a), which also extends at least one point (S1) of the interface (23) perpendicular to the interface (23) in the boundary portion (4) arranged local minimum (τ min ). |
| priorityDate | 2009-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.