| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eab56e4fe8837840887f41af83e328ee |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate |
2009-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbac8510cbe885c7468078f08c4a3fef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b42ee5f973f3442fc788c6d779dc1b6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c84b9a88296ba21e302e5cb4dbf25ea6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2022f9813e0cd84697795e1ced53760d |
| publicationDate |
2011-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102009030045-B3 |
| titleOfInvention |
Transparent rectifying metal-metal oxide semiconductor contact structure and methods of making and using same |
| abstract |
The invention relates to transparent rectifying contact structures for use in electronic components, in particular optoelectronics, solar technology and sensor technology, and a method for their production. The transparent rectifying contact structure according to the invention has the following constituents: a) a transparent semiconductor, b) a transparent, non-insulating and non-conductive layer of metal oxide, metal sulfide and / or metal nitride whose resistivity is preferably in the range of 10 2 Ωcm to 10 7 Ωcm and c) a layer of a transparent electrical conductor wherein the layer b) between the semiconductor a) and the layer c) is formed and the composition of the layer b) in the patent specification is defined in more detail. |
| priorityDate |
2009-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |