| abstract |
Sensor for recording a physical quantity, with: - A sensor substrate (21, 31, 41, 71, 81, 101) which has a first support substrate (9), a first insulating film (10) and a first semiconductor layer (11, 11 a), which are layered in this order, wherein the first support substrate (9) is doped with p-type impurities, the first insulating film (10) is composed of an oxide film doped with an impurity defined as p-type, and the first semiconductor layer (11, 11a ) is doped with p-conducting impurities; - A cap substrate (22, 32, 42, 52, 62, 72, 82, 102) having a second support substrate (22a) which is arranged on the first semiconductor layer (11, 11a) and doped with p-conducting impurities; and - Several electrodes (3d, 4b) which are arranged separately from one another, wherein - the physical quantity is detected on the basis of a capacitance between the plurality of electrodes (3d, 4b), - The plurality of electrodes (3d, 4b) are arranged in the first semiconductor layer (11, 11a), and - the first insulating film (10) under one of the plurality of electrodes (3d, 4b) is at least partially removed. |