| abstract |
Edge-emitting semiconductor laser with a semiconductor body (1) which has a waveguide region (2), wherein - the waveguide region (2) has a lower cladding layer (3a), a lower layer for generating laser radiation, an upper waveguide layer (4b) and an upper cladding layer (3b - the waveguide region (2) has at least one structured region (6) for mode selection, in which a lateral fundamental mode of the laser radiation experiences lower losses than the radiation of higher laser modes, - the at least one structured region (6) has at least one trench (7 ), which extends from an upper side of the semiconductor body (1) into the upper cladding layer (3b), - the at least one trench (7) is so deep that below the deepest point of the trench (7) no more than 300 nm the upper cladding layer (3b) remain, and - the at least one trench (7) has a varying depth, the depth from an edge region to a cent ral area of ... |