| abstract |
The invention relates to a device for generating a microwave plasma and to a device and a method for treating semiconductor substrates with a microwave plasma, wherein the microwave plasma device comprising at least one electrode (21, 22, 23) which is connectable to a microwave generator (20) the at least one electrode (21, 22, 23) has a coaxial inner conductor (21) of electrically conductive material, as well as a coaxial outer conductor (22) made of electrically conductive material which surrounds it at least partially and is spaced therefrom, and a plasma ignition device (23), which is connected to the coaxial inner conductor (21), characterized in that the coaxial outer conductor (22) has at least a first portion (31) in which it completely encloses the coaxial inner conductor (21) along its longitudinal axis, and at least one further portion (322), in which it the coaxial inner conductor ( 21) partially encloses so that a microwave radiation generated by the microwave generator (20) in the at least one further portion (32) can emerge substantially perpendicular to the longitudinal axis of the coaxial inner conductor (21) when the at least one electrode (21, 22, 23) is connected to the microwave generator (20). Furthermore, it relates to a device for semiconductor processing, which has a process chamber enclosed by a metal box (10), wherein the metal box ... |