http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102008036063-B4

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filingDate 2008-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c4664b20334531654982a03137aafa7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0030bf45910356809268be1c72597c75
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publicationDate 2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102008036063-B4
titleOfInvention Organic field effect transistor
abstract Organic field-effect transistor, in particular organic thin-film field-effect transistor, comprising: - a gate electrode (1), a drain electrode (5) and a source electrode (4), - an active layer (3) of organic material in operation, forming an electrical conduction channel, - a dielectric layer (2) which electrically isolates the active layer from the gate electrode (1), - a doping material layer (7) consisting of a molecular doping material, whose molecules consist of two or more atoms and which is an electrical dopant for the organic material of the active layer (3) for an electrical doping based on a partial charge transfer between the molecular doping material and the organic material of the active layer (3), and wherein the doping material layer (7) in an interface region (6) between the active layer (3) and the dielectric layer (2) or is formed adjacent to the interface region (6), and wherein the doping material layer (7) from the drain electrode (5) and the source electrode (4) is spaced apart.
priorityDate 2008-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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