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filingDate 2008-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48bbcea85a1162876b19af71fd25cda9
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publicationDate 2009-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102008029107-A1
titleOfInvention Method for producing a metal structure on a surface of a semiconductor substrate
abstract The invention relates to a method for producing a metal structure on a surface of a semiconductor substrate, comprising the following steps: A application of a metal layer, B applying a structuring layer and C removing the structuring layer, wherein, either in a masking process, step B is performed after step A and step C after step B so that the structuring layer at least partially covers the metal layer and after step B the metal layer is removed at the areas not covered by the structuring layer before step C is carried out or carried out in a lift-off process step A after step B and step C after step A, so that the structuring layer is substantially covered by the metal layer and at least in the areas in which the metal layer covers the structuring layer at Execution of step C, the metal layer is detached. It is essential that the structuring layer is produced in step B by means of a hot-melt ink.
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Total number of triples: 38.