http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102008009412-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34346 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-041 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 |
| filingDate | 2008-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_feb9a7c93a9c80eba2deaef1e061a400 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc5d15e0956c0b2d17e4660dc2c46ede http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70d6641a56aba99d7a3347ebde79020e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e3b429f18d7f62090b19e981f6dac9f |
| publicationDate | 2010-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102008009412-B4 |
| titleOfInvention | Infrared semiconductor laser |
| abstract | Semiconductor laser having at least one quantum well in which electron-hole pairs are recombinerable, with at least two barrier layers between which in each case one of the at least one quantum films is arranged on these surfaces directly or via an intermediate film in each case, and with a pump device, wherein with the pumping device the electron-hole pairs can be generated directly in the quantum film, characterized in that the barrier layers Al z Ga 1-z As y Sb 1-y with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4 and / or Al z Ga u In v As y Sb 1 have -y with z + u + v = 1 and z greater than or equal to 0.25, such that a potential depth of the quantum film in a heavy-hole band is so great that no thermal leakage current from or in layers adjacent to the quantum-film occurs during temperatures occurring during operation of the laser, and photons can be introduced into the quantum-film by the pumping device, whose energy is less than or equal to ... |
| priorityDate | 2008-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.