| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd446fb0d73aa96d044fea2eaa3c8ebc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R31-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R19-005 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04R31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L9-00 |
| filingDate |
2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8df6caf3043d2c1e4d8720b0f332744c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_431e2bceb77f740ec4ee1f676cb5d821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d39e78ab43a8928b123460941902fde6 |
| publicationDate |
2009-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102008001952-A1 |
| titleOfInvention |
Method for producing isolated micromechanical components arranged on a silicon substrate and components produced therefrom |
| abstract |
A method for producing singulated micromechanical components arranged on a silicon substrate (1) comprises the steps: a) providing dicing trenches (7) on the substrate by an anisotropic plasma deep etching method; b) irradiating the region (9, 12) of the silicon substrate (1), which forms the bottom of separating trenches (6), with laser light (11), by irradiating in this region (9, 12) the silicon substrate (1) of a crystalline state is converted into an at least partially amorphous state; c) Inducing mechanical stresses in the substrate (1). In one embodiment caverns (2) are etched simultaneously with the etching of the separating trenches (6). The control of the etch depths can be done via the RIE lag effect. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2531452-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112014000462-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014207619-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11452657-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102012222426-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102012222426-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9178018-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102011083962-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10112193-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11198119-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012153112-A3 |
| priorityDate |
2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |