http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102007058455-B4

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filingDate 2007-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f918bfde8e5cf0f8252932c72cd2c58e
publicationDate 2017-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102007058455-B4
titleOfInvention Method for producing a semiconductor element
abstract Method for producing a semiconductor element in a substrate, in which: Carbon ions are implanted into the substrate, thereby forming a plurality of carbide precipitates in the substrate; subsequently, pre-amorphizing ions are implanted into the substrate, whereby self-interstitial defects are formed in the substrate and the substrate is partially pre-amorphized; Doping atoms are implanted into at least a portion of an amorphous region of the substrate formed by the partial pre-amorphization; while heating the substrate, eliminating at least a part of the self-interstitial defects by means of the carbide precipitates; and the semiconductor element is formed using the doping atoms.
priorityDate 2006-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 27.