| abstract |
The invention relates to a metallic interconnection in a recess (58a, 58b) of a layer (51, 53), in particular a substrate layer or an insulating layer, as used in particular for a semiconductor component, and to an associated manufacturing method. A metallic interconnect according to the invention comprises an electropolished seed layer (61b) on bottom and side wall surfaces of the recess and a metal material (63a) filling the recess and electroplated onto the electropolished seed layer. Use eg in semiconductor memory devices. |