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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
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filingDate 2007-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e2d551647b4fa735adb07444c7552e1
publicationDate 2008-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102007043710-A1
titleOfInvention A deep via structure for a semiconductor device and a method of making the same
abstract AnSemiconductor integrated circuit device has a substratenand a deep via in the substrate, one in the deepnPlated metal fill, which defines an upper surface,nand a connection wiring. The contact surface electrically connects the metal fillingnwith the connection wiring, wherein the contact surface laterally ofnthe deep via is arranged so that the contact surface nonContact with the upper surfacenthe metal fillingnHas.
priorityDate 2006-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 22.