Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
filingDate |
2007-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e2d551647b4fa735adb07444c7552e1 |
publicationDate |
2008-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
DE-102007043710-A1 |
titleOfInvention |
A deep via structure for a semiconductor device and a method of making the same |
abstract |
AnSemiconductor integrated circuit device has a substratenand a deep via in the substrate, one in the deepnPlated metal fill, which defines an upper surface,nand a connection wiring. The contact surface electrically connects the metal fillingnwith the connection wiring, wherein the contact surface laterally ofnthe deep via is arranged so that the contact surface nonContact with the upper surfacenthe metal fillingnHas. |
priorityDate |
2006-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |