| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b4ef0fb7e0dfd596dbbe4854597b9c21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-975
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-959 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2007-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a028a50bd85fcdad87576c405fd08396
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68832ccb5009929f369c73537af931ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f0781e7901c3ae5b81f161047582682 |
| publicationDate |
2009-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102007041206-A1 |
| titleOfInvention |
A method for self-aligned removal of a high-k gate dielectric over an STI region |
| abstract |
BynForming a trench isolation structure after providing a layer dielectric stacknwith big ε becomes onendirect contact of an oxygen-containing insulating materialnan upper surfacenthe trench isolation structure with a dielectric material havingnbig ε in onenavoided common polycline. This technique is self-aligned,nwhereby a further component scaling is made possible without being veryntight lithography tolerances are to be observed. After making thenTrench isolation structure can provide the desired electrical connection over thenTrench isolation structure by providing another conductivenMaterials are restored. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102011090170-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8609509-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102011090170-A1 |
| priorityDate |
2007-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |